Our HiPSTER BiPolar HiPIMS units belong to a new generation of HiPIMS technology. They are designed by experts in the field with an excellent track record of plasma process development and thin film deposition in order to generate robust and repeatable HiPIMS processes.
Stable and robust discharge process (constant voltage and no unwanted oscillations)
Externally triggered and can also be controlled in master-slave configuration (multiple power supplies).
Need a DC driving unit?
The HiPSTER series offer an easy upgrade of an existing magnetron deposition system to true HiPIMS. The HiPSTER BiPolar can be directly connected either to two existing DC power supplies (positive and negative output) or to our tailor-made HiPSTER DC units. Please contact us for package deals.
Reactive process control
Reactive HiPIMS process control option can be implemented upon request. This feature allows:
Stable operation in the transition mode
Wide process window of reactive gas flow with maintained stoichiometric composition
Average Power: 6000 W
Peak Voltage: 1000 V
Peak Current: 600 A
Regulation Modes: Voltage, Current, Power, Puls current
Pulse frequency: 50 to 10000 Hz* * External triggering has an extended range;
contact Ionautics for more details
Arc control: reaction time < 2 µs
19" rack (3U)
135 mm (H) x 483 mm (W) x 390mm (D)
Weight: 16 kg
Input Voltage AC: 1 phase + N, 100-240 VAC, 50/60 Hz
Input Current at 230 V: 0.3 A
DC Charging Input: 1000 V max, positive grounded
Trigger In: Ground-Referenced 5V CMOS input
Remote Communication: RS-232
Negative Pulse Specifications
Output Peak Voltage: 1000 V
Output Peak Current: 600 A
Pulse Duration: 3.5 µs to 1000 µs
Positive Pulse Specifications
Output Peak Voltage: 600 V
Pulse Duration: 1.5 µs to 500 µs
Pulse Delay: 1.5 µs to 500 µs** ** From end of negative pulse
We successfully produce Ti and TiOx nanoparticles using the HiPSTER 1 accompanied with a gas aggregation source based on 2-inch planar magnetron.
It was easy setting up the unit in our existing deposition equipment. Operation of the device is very simple using the computer interface and does not require special instructions, which is a big advantage for the University, where new students have to be involved into the experiment.
Due to our specific experimental conditions the discharge was usually running at higher pressure comparing with "normal sputtering". Here must be mentioned very high discharge stability at this pressure range (10-200 Pa) with argon used as a working gas as well as during reactive sputtering of Ti.
The first time when I used HiPSTER 1 was my half year stay in Linköping University. This experience totally dispelled my negative image for HiPIMS power supply that is believed as huge system in the big cabinet with hundreds of cables, and took me on a new aspect of how the lab-use HiPIMS power supply should be.
HiPSTER 1 is very compact and has great mobility owing to its simplicity in configuration and design. You can simply connect the cables to DC power supply and magnetron cathode and you can start to ignite plasma. In particular, if you have a few different vacuum chamber systems for different purpose as often seen in the laboratory usage, you can flexibly plan the experimental schedule from one system to another.
Moreover, a new function of reactive process control using “peak target current monitoring” proved its great potential in the field of reactive sputtering. As we have experienced with HfN and TiOx deposition, great stability in wide range of reactive gas flow was successfully demonstrated.
Since last autumn 2015, we have launched a new vacuum system installed with HiPSTER 1 unit in our university. We are very much looking forward to have promising results of high functional thin film coatings.