e-CVD
Our e-CVD method uses the electrons in the plasma for deposition and holds the potential to streamline the advanced material industry. Using the high density of plasma electrons in HiPIMS, combined with the correct chemical precursors, complex shapes can be coated in a single step without breaking vacuum and without using wet chemical methods.
- Eco-friendly
- Secure
- Next generation for semiconductors
- Efficient
A word from our CVD Development Manager
Our e-CVD Technology
“We are certain that our e-CVD technology will create a safer work environment and generate a more efficient production of semiconductors. This is the next generation of technology for the electronics industry.”
Prof. Henrik Pedersen
Senior Advisor
e-CVD Technology
The non-line-of-sight deposition method can provide a faster and simplified process for metal deposition in the electronics industry by eliminating the need for wet-chemical deposition steps. High deposition rate at low temperature can be combined with bottom-up, and top-down, area-selective deposition without the need for hazardous, unstable molecules that require special handling, storage, and working routines.
APPLICATIONS
1. Area-selective metal-on-metal deposition
For metal film patterning in semiconductor devices which introduces new process design methods to reduce process complexity and increase energy efficiency in semiconductor manufacturing. 3D FinFETs and nanowires are examples of such applications.
2. Deposition on temperature sensitive materials
For metal film deposition on fabrics, polymers, flexible and other temperature-sensitive materials.
e-CVD Publications
For an in-depth description of our e-CVD technology
H. Nadhom, D. Lundin, P. Rouf, and H. Pedersen, J. Vac. Sci. Technol. A 38, 033402 (2020)