HiPSTER 1 BiPolar
Our HiPSTER BiPolar HiPIMS units belong to a new generation of HiPIMS technology. They are designed by experts in the field with an excellent track record of plasma process development and thin film deposition in order to generate robust and repeatable HiPIMS processes. With the new ultra-fast switching technology and extended HiPIMS pulse control the HiPSTER BiPolar is a perfect tool when developing and running state-of-the-art HiPIMS processes. Also, upgrading your existing magnetron system to HiPIMS has never been easier. The HiPSTER BiPolar can be connected either to two existing DC power supplies (positive and negative output) or to our tailor-made HiPSTER DC units.
FEATURES
- Bipolar operation provides ion acceleration without the need of substrate biasing
- Stable and robust discharge process (constant voltage and no unwanted oscillations)
- Can be triggered externally (multiple power supplies)
- New switching technology allowing HiPIMS pulsing frequencies up to 10 kHz
- Tested using a wide range of magnetrons and processes (incl. reactive HiPIMS)
- Add Ionautics’ reactive process control for increased stability and higher deposition rate
- Add Ionautics’ superposition technology for HiPIMS + DC
APPLICATIONS
- Hard coatings: Smoother and denser elemental as well as reactively deposited compound coatings, which result in increased hardness, reduced corrosion, and less friction
- Optical coatings: Increased optical properties through smoother interfaces and denser structures
- Diffusion barriers: Better performance through increased coating density
- Electrical coatings: Improved conductivity enabling reduced coating thickness and reduced heat load. Also increased isolation in the case of insulators can be obtained
- 3-D coatings: Uniform film coverage on complex shaped substrates
Top-quality products require top-quality components. In order to achieve an optimal result, we recommend using our tailormade HiPSTER DC units and our cables. Contact us for a package deal.
Download data sheet here.
