Our HiPSTER BiPolar HiPIMS units belong to a new generation of HiPIMS technology. They are designed by experts in the field with an excellent track record of plasma process development and thin film deposition in order to generate robust and repeatable HiPIMS processes.
Stable and robust discharge process (constant voltage and no unwanted oscillations)
Externally triggered and can also be controlled in master-slave configuration (multiple power supplies).
Need a DC driving unit?
The HiPSTER series offer an easy upgrade of an existing magnetron deposition system to true HiPIMS. The HiPSTER BiPolar can be directly connected either to two existing DC power supplies (positive and negative output) or to our tailor-made HiPSTER DC units. Please contact us for package deals.
Reactive process control
Reactive HiPIMS process control option can be implemented upon request. This feature allows:
Stable operation in the transition mode
Wide process window of reactive gas flow with maintained stoichiometric composition
Average Power: 6000 W
Peak Voltage: 1000 V
Peak Current: 600 A
Regulation Modes: Voltage, Current, Power, Puls current
Pulse frequency: 50 to 10000 Hz* * External triggering has an extended range;
contact Ionautics for more details
Arc control: reaction time < 2 µs
19" rack (3U)
135 mm (H) x 483 mm (W) x 390mm (D)
Weight: 16 kg
Input Voltage AC: 1 phase + N, 100-240 VAC, 50/60 Hz
Input Current at 230 V: 0.3 A
DC Charging Input: 1000 V max, positive grounded
Trigger In: Ground-Referenced 5V CMOS input
Remote Communication: RS-232
Negative Pulse Specifications
Output Peak Voltage: 1000 V
Output Peak Current: 600 A
Pulse Duration: 3.5 µs to 1000 µs
Positive Pulse Specifications
Output Peak Voltage: 300 V
Pulse Duration: 1.5 µs to 500 µs
Pulse Delay: 1.5 µs to 500 µs** ** From end of negative pulse